IEEE

A Multi-WL Approach to Suppress Gate-Induced Drain Leakage, Floating Body Effect, and Row Hammer Effect in Array Transistor of 4F2 DRAM and 3D Stackable DRAM

Abstract: Targeting the next-generation 4F2 DRAM and 3D stackable DRAM, we propose a multi-wordline (preferably 2-wordline) array transistor for 1T1C DRAM to efficiently minimize gate-induced drain ...
IEEE

Width-Induced Hump Effect and Electrical Stress Impact on N-Type Junctionless Gate-All-Around Transistors

Abstract: Junctionless gate-all-around (JLGAA) transistors offer enhanced performance and scalability over conventional transistors. However, this study found that n-type JLGAA transistors made from ...