Cornell researchers have developed a new transistor architecture that could reshape how high-power wireless electronics are engineered, while also addressing supply chain vulnerabilities for a ...

In the harsh stillness of winter, common buzzards gather around a fallen deer. While it may seem somber, this is nature’s way of renewal — in the frozen wilderness, nothing goes to waste. Putin caught ...

The common emitter amplifier is one of three basic single-stage amplifier topologies. The BJT version functions as an inverting voltage amplifier. The base terminal of the transistor serves as the ...

The common source amplifier is one of three basic single-stage amplifier topologies. The MOS version functions as an inverting voltage amplifier. The gate terminal of the transistor serves as the ...

An Army sergeant shot and wounded five fellow soldiers on Aug. 6 at the Fort Stewart military base in Georgia, the latest in a growing number of violent, and sometimes deadly, incidents at U.S.

Imec’s RF GaN-on-Si transistor achieves record efficiency and output power for an E-mode device, targeting high-efficiency 6G power amplifiers. Imec claims a new benchmark for mobile RF transistor ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a world’s first compact 7GHz band gallium nitride (GaN) power amplifier module (PAM) with ...

Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) are now central to high-power, high-frequency RF systems used in aerospace, communications and advanced energy systems. Engineers value ...