Abstract: We present PLC (Penta-level cell, 5 bits/cell) NAND flash memory using 3D charge-trap-flash (CTF) cell. To achieve PLC cell distribution with proper cell read margin, program noise and short ...

Kioxia’s flash memory roadmap is shaping up for a busy two-year cycle, with BiCS9 set for mass production at the end of fiscal 2025 and the more advanced BiCS10 arriving in 2026. The company is ...

Abstract: In this article, we propose a coupling-free readout scheme designed for a hardware neural network employing memcapacitive devices based on Si MOS capacitors having a charging trapping layer.

Forward-looking: Building NAND with ferroelectric transistors can dramatically cut power consumption by sidestepping a core limitation of conventional NAND, according to a new study from the Samsung ...

Throw the GPUs in there too, why don't you? When you purchase through links on our site, we may earn an affiliate commission. Here’s how it works. Another day, another round of bad news regarding the ...

TL;DR: Samsung has developed next-generation NAND flash storage that reduces power consumption by up to 96% compared to current technology. This breakthrough, based on ferroelectric transistors and ...

Chip manufacturers are warning of a shortage in DRAM, NAND and probably HBM memory chips because demand from cloud providers is outstripping supply. The problem is compounded by the Trump ...